HGCB4A401200 SIC Inverter (H-Bridge) Circuit Block

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The H-bridge consists of four ROHM-manufactured SiC-MOSFET units, forming a compact inverter about the size of a postcard. With a built-in gate drive circuit, it operates as a single-phase inverter at a maximum power of 4 kVA by inputting a gate signal. A version with four circuit blocks, a cooling mechanism, and a voltage sensor is also available.

Test System Features

SiC H-Bridge Inverter
A voltage sensor circuit is built in

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Product Description -

SPECIFICATIONS

TYPE OF TESTS	SPECIFICATIONS
Equipment Size	W:150mm / D:110mm / H:54mm : HGCB-4A-401200
Weight	W: 162mm / D: 170mm / H: 246mm : HGCB-4x4A-401200
DC Voltage Range	0 V - 400 V : [DC+] - [DC-] terminal voltage
Dead-time	≥ 200 ns
Switching Frequency	200 kHz
Power Supply	DC24 V

KEY FEATURES

Gating Signal	5 V TTL (negative) with 10 kΩ pull-down
Error Reset Signal	5 V TTL (negative) with 10 kΩ pull-down
Error Signal	5 V TTL (negative) with 10 kΩ pull-down
Error Signal (Error Link Function)	Error Sharing among multiple blocks to enable a synchronous stop (gate block)

What we offer

The HGCB-4A-401200 SiC Inverter (H-Bridge) Circuit Block delivers high-efficiency power conversion using advanced Silicon Carbide (SiC) technology. Designed for optimal performance, it ensures precise control, reliability, and durability in demanding applications, making it ideal for electric vehicles and industrial systems requiring robust and efficient inverter solutions.